All receivers of laser pointer will store the same address code

All receivers of laser pointer will store the same address code
Therefore, to develop the TFT-LCD related materials has become the common and urgent tasks of the industry. Nano-information materials is an important part of nano-materials, and electronics, optoelectronics and communications technology, computer technology is closely related. February 2000 published by the United States National Nanotechnology Initiative, said: "nanostructures will nurture a revolution in the IT hardware, similar 30 years ago that a microelectronics revolution that a revolution in semiconductor Electronics replaced the vacuum tube electronics; the coming of a nanoelectronics revolution, millions of times more the Supermicro transistors and memory chips will improve the speed and efficiency of the computer.
Self-organized quantum dot lasers. Since 1971 molecular beam epitaxy grown GaAs potential well, and AlxGa1-xAs after the barrier of quantum wells, quantum confinement effects in quantum wells has been extensive and in-depth study, and on this basis developed many new high-performance optoelectronic and microelectronic devices, such as: heterojunction lasers, quantum well lasers, optical bistable devices, infrared detectors, high electron mobility transistors and heterojunction bipolar transistors, have been entered the practical stage, and some have been formed products. A large number of semiconductor lasers used in fiber-optic communications, CD-ROM access, monitor, etc.. As the use of the quantum confinement effect and bandgap engineering design.
The reason is that the quantum dot preparation process is not perfect. In order to improve the performance of quantum dot lasers, but also the need for manufacturing technology to make significant improvements in-depth study of the physics of quantum dots. Silicon-based materials. Silicon is the main material for microelectronic devices, low prices, devices and integrated circuit processing technology is mature, with the incomparable superiority of other semiconductor materials. However, silicon is an indirect band gap semiconductor, its luminous efficiency is very low. If you do use silicon light emitting devices, and on the same chip with other optical components, microelectronic devices, to achieve optoelectronic integrated. Will undoubtedly show that the communications, computer and other far-reaching impact. The laser pointer can burn the match or other materials.
For example, the time lag caused by the electrical interconnection between the devices has become a bottleneck for the development of ultra-LSI. Use optical interconnects to replace currently used by the electrical interconnection of integrated circuits can greatly improve performance, increase computer speed. 1990 Hom Han (LTCanham,) found that the luminescence of porous silicon, has opened a new prospect for optoelectronic integration on silicon.